50-75% Rabatt
VishaySIHA22N60E-E3MOSFETs
Trans MOSFET N-CH Si 600V 8A 3-Pin(3+Tab) TO-220 Full-Pak
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 8 | |
| 100 | |
| 1 | |
| 180@10V | |
| 57@10V | |
| 57 | |
| 1920@100V | |
| 35000 | |
| 35 | |
| 77 | |
| 26 | |
| 18 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.3(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.3(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 Full-Pak |
| 3 | |
| Leitungsform | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The SIHA22N60E-E3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 35000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.