| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 15 | |
| 100 | |
| 1 | |
| 280@10V | |
| 39@10V | |
| 39 | |
| 1350@100V | |
| 34000 | |
| 22 | |
| 26 | |
| 41 | |
| 16 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.12(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.63(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this SIHF15N60E-E3 power MOSFET from Vishay. Its maximum power dissipation is 34000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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