25-50% Rabatt
VishaySIHG33N60E-GE3MOSFETs
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 33 | |
| 100 | |
| 1 | |
| 99@10V | |
| 100@10V | |
| 100 | |
| 3508@100V | |
| 278000 | |
| 54 | |
| 60 | |
| 99 | |
| 28 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.7(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 15.87(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AC |
| 3 | |
| Leitungsform | Through Hole |
Increase the current or voltage in your circuit with this SIHG33N60E-GE3 power MOSFET from Vishay. Its maximum power dissipation is 278000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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