| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 21 | |
| 180@10V | |
| 57@10V | |
| 57 | |
| 1920@100V | |
| 227000 | |
| 35 | |
| 27 | |
| 66 | |
| 18 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this SIHP22N60E-GE3 power MOSFET from Vishay. Its maximum power dissipation is 227000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.