| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±20 | |
| 2.5 | |
| 35 | |
| 100 | |
| 1 | |
| 4.8@10V | |
| 16.7@4.5V|27@10V | |
| 27 | |
| 1600@10V | |
| 4200 | |
| 15 | |
| 15 | |
| 30 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
This SIR410DP-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 4200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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