VishaySIR426DP-T1-GE3MOSFETs
Trans MOSFET N-CH 40V 30A Automotive 8-Pin PowerPAK SO EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 30 | |
| 100 | |
| 1 | |
| 10.5@10V | |
| 20.5@10V|9.3@4.5V | |
| 20.5 | |
| 2.5 | |
| 3.1 | |
| 19 | |
| 1160@20V | |
| 70@20V | |
| 1.2 | |
| 185 | |
| 4800 | |
| 10 | |
| 15 | |
| 18 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8.5@10V|10.4@4.5V | |
| 4.8 | |
| 70 | |
| 70 | |
| 0.77 | |
| 2.5 | |
| 23 | |
| 1.2 | |
| 0.2 | |
| 1.6 | |
| 20 | |
| 15.9 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the SIR426DP-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 4800 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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