| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.8 | |
| 60 | |
| 100 | |
| 1 | |
| 8.7@10V | |
| 39.5@10V|30.3@7.5V|19.5@4.5V | |
| 39.5 | |
| 1975@50V | |
| 748 | |
| 5400 | |
| 9|10 | |
| 12|14 | |
| 32|34 | |
| 11|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 17.6 | |
| 5.4 | |
| 65 | |
| 0.74 | |
| 3 | |
| 49 | |
| 1.1 | |
| 0.2 | |
| 1.9 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the SIR882ADP-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 5400 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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