| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2.2 | |
| -55 to 150 | |
| 58 | |
| 100 | |
| 1 | |
| 5.1@10V | |
| 9.4@4.5V|19.4@10V | |
| 19.4 | |
| 1.8 | |
| 4 | |
| 14 | |
| 1450@15V | |
| 38@15V | |
| 1.1 | |
| 445 | |
| 3600 | |
| 9 | |
| 12 | |
| 18 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.25@10V|6.8@4.5V | |
| 3.6 | |
| 130 | |
| 70 | |
| 0.76 | |
| 2.5 | |
| 24 | |
| 1.1 | |
| 0.4 | |
| 3.3 | |
| 20 | |
| 19.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SIRA14DP-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 3600 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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