| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 18 | |
| 100 | |
| 1 | |
| 9@4.5V | |
| 63@4.5V|112@8V | |
| 25.3 | |
| 8.7 | |
| 38 | |
| 5875@10V | |
| 555@10V | |
| 0.4 | |
| 540 | |
| 3700 | |
| 36 | |
| 4 | |
| 120 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 14.5@1.8V|10@2.5V|7.3@4.5V | |
| 3.7 | |
| 70 | |
| 81 | |
| 0.75 | |
| 1.4 | |
| 45 | |
| 1.2 | |
| 0.8 | |
| 7.2 | |
| 8 | |
| 16.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SIS407ADN-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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