| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 18 | |
| 100 | |
| 1 | |
| 9.4@10V | |
| 35.4@4.5V|73@10V | |
| 73 | |
| 4280@15V | |
| 3700 | |
| 8|13 | |
| 11|82 | |
| 45|42 | |
| 11|55 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the SIS413DN-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3700 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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