| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2.2 | |
| 25 | |
| 100 | |
| 1 | |
| 4.3@10V | |
| 13.6@4.5V|29.5@10V | |
| 29.5 | |
| 2070@15V | |
| 3500 | |
| 10 | |
| 10|15 | |
| 22|25 | |
| 10|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SISA12ADN-T1-GE3 power MOSFET. Its maximum power dissipation is 3500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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