| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 50 | |
| 100 | |
| 1 | |
| 5.6@10V | |
| 45@4.5V|92@10V | |
| 92 | |
| 5250@15V | |
| 4800 | |
| 20|10 | |
| 45|5 | |
| 50|65 | |
| 60|16 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.78(Max) |
| Verpackungsbreite | 3.3 |
| Verpackungslänge | 3.3 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212-S |
| 8 |
Compared to traditional transistors, SISS27DN-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 4800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C.
| EDA / CAD Models |
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