| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Common Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 16@Channel 1|28@Channel 2 | |
| 100 | |
| 1 | |
| 12@10V@Channel 1|3.7@10V@Channel 2 | |
| 14@10V|6.8@4.5V@Channel 1|67.3@10V|32@4.5V@Channel 2 | |
| 14@Channel 1|67.3@Channel 2 | |
| 790@15V@Channel 1|3830@15V@Channel 2 | |
| 4200@Channel 1|5200@Channel 2 | |
| 10@Channel 1|12@Channel 2 | |
| 12@Channel 1|33@Channel 2 | |
| 20@Channel 1|40@Channel 2 | |
| 15@Channel 1|30@Channel 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.7(Max) mm |
| Verpackungsbreite | 6 mm |
| Verpackungslänge | 5 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAIR EP |
| 8 |
Make an effective common source amplifier using this SIZ918DT-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 4200@Channel 1|5200@Channel 2 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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