Infineon Technologies AGSMBT3906E6327HTSA1GP BJT

Trans GP BJT PNP 40V 0.2A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP SMBT3906E6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Auf Lager: 279.000 Stück

Regional Inventory: 270.000

    Total612,00 €Price for 3000

    270.000 auf Lager: Versand in vsl. 2 Tagen

    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2337+
      Manufacturer Lead Time:
      15 Wochen
      Country Of origin:
      Österreich
      • In Stock: 270.000 Stück
      • Price: 0,2040 €
    • (3000)

      Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2320+
      Manufacturer Lead Time:
      15 Wochen
      Country Of origin:
      China
      • In Stock: 9.000 Stück
      • Price: 0,2158 €

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