onsemiSMMBT2222ALT1GGP BJT
Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.6 | |
| 10 | |
| 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This specially engineered NPN SMMBT2222ALT1G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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