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Infineon Technologies AGSPA08N50C3XKSA1MOSFETs
Trans MOSFET N-CH 560V 7.6A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 560 | |
| ±20 | |
| 7.6 | |
| 600@10V | |
| 32@10V | |
| 32 | |
| 750@25V | |
| 83000 | |
| 7 | |
| 5 | |
| 60 | |
| 6 | |
| -55 | |
| 150 | |
| Tube | |
| 500@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.99 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the SPA08N50C3XKSA1 power MOSFET. Its maximum power dissipation is 32000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
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