Infineon Technologies AGSPB18P06PGATMA1MOSFETs
Trans MOSFET P-CH 60V 18.7A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 18.7 | |
| 130@10V | |
| 22@10V | |
| 22 | |
| 690@25V | |
| 81100 | |
| 11 | |
| 5.8 | |
| 24.5 | |
| 12 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 101@10V | |
| Befestigung | Surface Mount |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Amplify electronic signals and switch between them with the help of Infineon Technologies' SPB18P06PGATMA1 power MOSFET. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes sipmos technology.
| EDA / CAD Models |
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