Reduced Price
Infineon Technologies AGSPD02N50C3BTMA1MOSFETs
Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 1.8 | |
| 3000@10V | |
| 9@10V | |
| 9 | |
| 190@25V | |
| 25000 | |
| 15 | |
| 5 | |
| 70 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.22 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
As an alternative to traditional transistors, the SPD02N50C3BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 25000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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