Infineon Technologies AGSPD07N60C3BTMA1MOSFETs
SPD07N60C3BTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SPD07N60C3BTMA1 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 7.3 | |
| 600@10V | |
| 21@10V | |
| 21 | |
| 790@25V | |
| 83000 | |
| 7 | |
| 3.5 | |
| 60 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.41(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
This SPD07N60C3BTMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 83000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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