Infineon Technologies AGSPD08P06PGBTMA1MOSFETs
Trans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 8.83 | |
| 300@6.2V | |
| 10@10V | |
| 10 | |
| 335@25V | |
| 42000 | |
| 14 | |
| 46 | |
| 48 | |
| 16 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 230@6.2V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.41(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SPD08P06PGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 42000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes sipmos technology.
| EDA / CAD Models |
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