Infineon Technologies AGSPD15P10PLGBTMA1MOSFETs
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 2 | |
| 15 | |
| 100 | |
| 1 | |
| 200@10V | |
| 47@10V | |
| 47 | |
| 17 | |
| 4.3 | |
| 450 | |
| 1120@25V | |
| 272 | |
| 128000 | |
| 29 | |
| 21 | |
| 50 | |
| 7.6 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 140@10V|190@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.41(Max) |
| Verpackungsbreite | 6.22(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, SPD15P10PLGBTMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 128000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.
| EDA / CAD Models |
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