Infineon Technologies AGSPP04N80C3XKSA1MOSFETs
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 3.9 | |
| 4 | |
| 1300@10V | |
| 20@10V | |
| 20 | |
| 570@100V | |
| 63000 | |
| 12 | |
| 15 | |
| 65 | |
| 25 | |
| -55 | |
| 150 | |
| Tube | |
| 1100@10V | |
| 12 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, SPP04N80C3XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 63000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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