Infineon Technologies AGSPP06N60C3XKSA1MOSFETs
Trans MOSFET N-CH 650V 6.2A 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 6.2 | |
| 750@10V | |
| 24@10V | |
| 24 | |
| 620@25V | |
| 74000 | |
| 10 | |
| 12 | |
| 52 | |
| 7 | |
| -55 | |
| 150 | |
| Tube | |
| 680@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of Infineon Technologies' SPP06N60C3XKSA1 power MOSFET. Its maximum power dissipation is 74000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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