Infineon Technologies AGSPP11N60C3XKSA1MOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.9 | |
| 11 | |
| 380@10V | |
| 45@10V | |
| 45 | |
| 1200@25V | |
| 125000 | |
| 5 | |
| 5 | |
| 44 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| 340@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of Infineon Technologies' SPP11N60C3XKSA1 power MOSFET. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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