Infineon Technologies AGSPP80P06PHXKSA1MOSFETs
Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 80 | |
| 100 | |
| 1 | |
| 23@10V | |
| 115@10V | |
| 115 | |
| 50 | |
| 27.4 | |
| 420 | |
| 4026@25V | |
| 437@25V | |
| 2.1 | |
| 1252 | |
| 340000 | |
| 30 | |
| 18 | |
| 56 | |
| 24 | |
| -55 | |
| 175 | |
| Automotive | |
| Tube | |
| 21@10V | |
| 320 | |
| 62 | |
| 1.2 | |
| 6.2 | |
| 117 | |
| 1.6 | |
| 3 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.68 |
| Verpackungsbreite | 4.7 |
| Verpackungslänge | 10.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the SPP80P06PHXKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 340000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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