Infineon Technologies AGSPW35N60C3FKSA1MOSFETs
Trans MOSFET N-CH 650V 34.6A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 3.9 | |
| 34.6 | |
| 100@10V | |
| 150@10V | |
| 150 | |
| 4500@25V | |
| 313000 | |
| 10 | |
| 5 | |
| 70 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| 81@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.95 mm |
| Verpackungsbreite | 5.3 mm |
| Verpackungslänge | 15.9 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The SPW35N60C3FKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 313000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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