VishaySQ4401EY-T1_GE3MOSFETs
Trans MOSFET P-CH 40V 17.3A 8-Pin SOIC N T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 2700nm | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 17.3 | |
| 100 | |
| 1 | |
| 14@10V | |
| 74@10V | |
| 74 | |
| 3400@20V | |
| 7140 | |
| 44 | |
| 76 | |
| 67 | |
| 58 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SQ4401EY-T1_GE3 power MOSFET. Its maximum power dissipation is 7140 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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