VishaySQD50P04-13L_GE3MOSFETs
Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 50 | |
| 100 | |
| 1 | |
| 13@10V | |
| 60@10V | |
| 60 | |
| 2872@25V | |
| 3000 | |
| 16 | |
| 12 | |
| 40 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) |
| Verpackungsbreite | 6.22(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The SQD50P04-13L-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 3000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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