VishaySQJ422EP-T1_GE3MOSFETs
Trans MOSFET N-CH 40V 75A 5-Pin(4+Tab) PowerPAK SO EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| -55 to 175 | |
| 75 | |
| 100 | |
| 1 | |
| 3.4@10V | |
| 67@10V | |
| 67 | |
| 4616@20V | |
| 83000 | |
| 8 | |
| 10 | |
| 29 | |
| 13 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07 |
| Verpackungsbreite | 4.37 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 5 |
As an alternative to traditional transistors, the SQJ422EP-T1_GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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