VishaySQJ940EP-T1_GE3MOSFETs
Trans MOSFET N-CH 40V 15A/18A 5-Pin(4+Tab) PowerPAK SO EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 15@Channel 1|18@Channel 2 | |
| 100 | |
| 1 | |
| 16@10V@Channel 1|6.4@10V@Channel 2 | |
| 13.5@10V@Channel 1|31.8@10V@Channel 2 | |
| 13.5@Channel 1|31.8@Channel 2 | |
| 717@20V@Channel 1|1850@20V@Channel 2 | |
| 48000@Channel 1|43000@Channel 2 | |
| 4.9@Channel 1|13.5@Channel 2 | |
| 9.5@Channel 1|9.5@Channel 2 | |
| 15.6@Channel 1|47@Channel 2 | |
| 4.8@Channel 1|7.7@Channel 2 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07 |
| Verpackungsbreite | 4.37 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 5 |
Compared to traditional transistors, SQJ940EP-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 48000@Channel 1|43000@Channel 2 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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