VishaySQM120P04-04L_GE3MOSFETs
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| 2700nm | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 120 | |
| 100 | |
| 1 | |
| 4@10V | |
| 220@10V | |
| 220 | |
| 11183@20V | |
| 375000 | |
| 45 | |
| 15 | |
| 112 | |
| 17 | |
| -55 | |
| 175 | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.65(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Create an effective common drain amplifier using this SQM120P04-04L_GE3 power MOSFET from Vishay. Its maximum power dissipation is 375000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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