Reduced Price
VishaySQS482EN-T1_GE3MOSFETs
Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 16 | |
| 100 | |
| 1 | |
| 8.5@10V | |
| 26@10V | |
| 26 | |
| 1492@25V | |
| 62000 | |
| 18 | |
| 21 | |
| 49 | |
| 7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SQS482EN-T1_GE3 power MOSFET from Vishay. Its maximum power dissipation is 62000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.