VishaySQS484EN-T1_GE3MOSFETs
Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK 1212 EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| SQS484EN-T1_GE3 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 1500nm | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 16 | |
| 100 | |
| 1 | |
| 9@10V | |
| 25.5@10V | |
| 25.5 | |
| 1484@25V | |
| 62000 | |
| 20 | |
| 14 | |
| 48 | |
| 8 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 |
This SQS484EN-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 62000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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