| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 4.4 | |
| 1000 | |
| 1 | |
| 25.8@4.5V | |
| 24.8@4.5V | |
| 1800@10V | |
| 800 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.7 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | UFM |
| 3 |
Make an effective common source amplifier using this SSM3J130TU(TE85L) power MOSFET from Toshiba. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes u-mos vi technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.