| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±6 | |
| 1 | |
| 12 | |
| 1000 | |
| 1 | |
| 12@4.5V | |
| 37.6@4.5V | |
| 2700@10V | |
| 2500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 2 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | UDFN-B EP |
| 6 | |
| Leitungsform | No Lead |
Amplify electronic signals and switch between them with the help of Toshiba's SSM6J505NU,LF power MOSFET. Its maximum power dissipation is 2500 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes u-mos vi technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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