ToshibaSSM6L35FU(TE85L,F)MOSFETs
Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin US T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Si | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±10 | |
| 0.18@N Channel|0.1@P Channel | |
| 3000@4V@N Channel|8000@4V@P Channel | |
| 9.5@3V@N Channel|12.2@3V@P Channel | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | US |
| 6 |
Create an effective common drain amplifier using this SSM6L35FU(TE85L,F) power MOSFET from Toshiba. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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