| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±10 | |
| 0.25 | |
| 2200@4.5V | |
| 12@10V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | ES |
| 6 |
Compared to traditional transistors, SSM6N37FE,LM power MOSFETs, developed by Toshiba, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 150 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.