| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±10 | |
| 0.1 | |
| 8000@4V | |
| 11@3V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | ES |
| 6 | |
| Leitungsform | Flat |
Thanks to Toshiba, both your amplification and switching needs can be taken care of with one component: the SSM6P16FE(TE85L,F) power MOSFET. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.