| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±8 | |
| 1 | |
| 4 | |
| 1000 | |
| 1 | |
| 95@4.5V | |
| 4.6@4.5V | |
| 290@10V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | UDFN EP |
| 6 | |
| Leitungsform | No Lead |
Thanks to Toshiba, both your amplification and switching needs can be taken care of with one component: the SSM6P47NU,LF power MOSFET. Its maximum power dissipation is 2000 mW. This P channel MOSFET transistor operates in enhancement mode. This device is made with u-mos vi technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.