STMicroelectronicsST901TDarlington BJT
Trans Darlington NPN 350V 4A 100000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 350 | |
| 5 | |
| 1.8@20mA@2A | |
| 4 | |
| 2@20mA@2A | |
| 500@4A@2V|1800@2A@2V | |
| 100000 | |
| -65 | |
| 150 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Amplify your current with the NPN ST901T Darlington transistor, developed by STMicroelectronics. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 500@4A@2 V|1800@2A@2V. It has a maximum collector emitter saturation voltage of 2@20mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.8@20mA@2A V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.