10-25% Rabatt
STMicroelectronicsSTB28NM60NDMOSFETs
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 5 | |
| 23 | |
| 100 | |
| 1 | |
| 150@10V | |
| 62.5@10V | |
| 62.5 | |
| 2090@100V | |
| 190000 | |
| 27 | |
| 21.5 | |
| 92 | |
| 23.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) mm |
| Verpackungsbreite | 9.35(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, STB28NM60ND power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 19000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes fdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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