STMicroelectronicsSTB36NM60NDMOSFETs
Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| STB36NM60ND | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 5 | |
| 29 | |
| 100 | |
| 1 | |
| 110@10V | |
| 80.4@10V | |
| 80.4 | |
| 2785@50V | |
| 190000 | |
| 61.8 | |
| 53.4 | |
| 111 | |
| 30 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) mm |
| Verpackungsbreite | 9.35(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then STMicroelectronics' STB36NM60ND power MOSFET is for you. Its maximum power dissipation is 190000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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