STMicroelectronicsSTB40NF10LT4MOSFETs
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±15 | |
| 40 | |
| 33@10V | |
| 46@4.5V | |
| 2300@25V | |
| 150000 | |
| 24 | |
| 82 | |
| 64 | |
| 25 | |
| -65 | |
| 175 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) |
| Verpackungsbreite | 9.35(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the STB40NF10LT4 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 150000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 175 °C. This device utilizes stripfet ii technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.