STMicroelectronicsSTB8NM60T4MOSFETs
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 8 | |
| 1000@10V | |
| 13@10V | |
| 13 | |
| 400@25V | |
| 100000 | |
| 10 | |
| 10 | |
| 23 | |
| 14 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) mm |
| Verpackungsbreite | 9.35(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
This STB8NM60T4 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 100000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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