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STMicroelectronicsSTD10N60M2MOSFETs
Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 7.5 | |
| 10000 | |
| 1 | |
| 600@10V | |
| 13.5@10V | |
| 13.5 | |
| 400@100V | |
| 85000 | |
| 13.2 | |
| 8 | |
| 32.5 | |
| 8.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.2(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this STD10N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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