50-75% Rabatt
STMicroelectronicsSTD1NK80Z-1MOSFETs
Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 1 | |
| 16000@10V | |
| 7.7@10V | |
| 7.7 | |
| 160@25V | |
| 45000 | |
| 55 | |
| 30 | |
| 22 | |
| 8 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.2(Max) mm |
| Verpackungsbreite | 2.4(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, STD1NK80Z-1 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 45000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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