STMicroelectronicsSTD4N52K3MOSFETs
Trans MOSFET N-CH 525V 2.5A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 525 | |
| ±30 | |
| 4.5 | |
| 2.5 | |
| 10000 | |
| 1 | |
| 2600@10V | |
| 11@10V | |
| 11 | |
| 334@100V | |
| 45000 | |
| 14 | |
| 7 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.2(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this STD4N52K3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.