| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 5 | |
| 10000 | |
| 1 | |
| 950@10V | |
| 8.8@10V | |
| 8.8 | |
| 271@100V | |
| 60000 | |
| 15.9 | |
| 7.2 | |
| 19.3 | |
| 7.6 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.2(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this STD7N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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