STMicroelectronicsSTGD18N40LZT4IGBT-Chip
Trans IGBT Chip N-CH 360V 30A 125W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| N | |
| Single | |
| 12 | |
| 360 | |
| 1.35 | |
| 30 | |
| 830 | |
| 125 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.2(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Use the STGD18N40LZT4 IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 360 V. Its maximum power dissipation is 125000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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