STMicroelectronicsSTGD3NB60SDT4IGBT-Chip
Trans IGBT Chip N-CH 600V 6A 48W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8504.40.60.18 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.2 | |
| 6 | |
| 0.1 | |
| 48 | |
| -65 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) mm |
| Verpackungsbreite | 6.2(Max) mm |
| Verpackungslänge | 6.6(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
You won't need to worry about any lagging in your circuit with this STGD3NB60SDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |
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